Low temperature metal induced crystallization of amorphous silicon using a Ni solution
作者:
Soo Young Yoon,
Ki Hyung Kim,
Chae Ok Kim,
Jae Young Oh,
Jin Jang,
期刊:
Journal of Applied Physics
(AIP Available online 1997)
卷期:
Volume 82,
issue 11
页码: 5865-5867
ISSN:0021-8979
年代: 1997
DOI:10.1063/1.366455
出版商: AIP
数据来源: AIP
摘要:
Amorphous silicon (a-Si) was crystallized by metal-induced crystallization (MIC) using a Ni standard absorption solution. The a-Si films spin-coated with a 5000 ppm Ni solution were crystallized at as low as 500 °C. Needlelike morphology, developed as a result of the migration of NiSi2precipitates, appears in the MIC poly-Si. The growth of the needlelike crystallites proceeds to a direction parallel to〈111〉. The a-Si can be fully crystallized at 500 °C for 20 h. ©1997 American Institute of Physics.
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