32×32 planar IR photovoltaic mosaic arrays on sputtered CdxHg1−xTe epilayers
作者:
R. Roussille,
D. Amingual,
R. Boch,
G. L. Destefanis,
J. L. Tissot,
期刊:
Applied Physics Letters
(AIP Available online 1984)
卷期:
Volume 44,
issue 7
页码: 679-681
ISSN:0003-6951
年代: 1984
DOI:10.1063/1.94875
出版商: AIP
数据来源: AIP
摘要:
Epitaxialn‐type CdxHg1−xTe layers on (111) CdTe substrates have been grown between 250 and 300 °C by sputtering deposition. The standard growth rate was nominally 2 &mgr;m/h for a thickness range from 10 to 30 &mgr;m. Typical electron concentration in CdxHg1−xTe layers with Cd composition of 0.34 is around of 2×1016cm−3with a Hall mobility of 20 000 cm2 V−1 s−1at 77 K. Films can be converted to ptype after annealing. We report for the first time the characteristics of backside illuminated 32×32 planar photovoltaic mosaic arrays processed on sputtered layers. Hybrid structures have been fabricated and evaluated; the preliminary results indicate the suitability of these mosaics for hybrid focal plane applications.
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