首页   按字顺浏览 期刊浏览 卷期浏览 Photoconductor gain mechanisms in GaN ultraviolet detectors
Photoconductor gain mechanisms in GaN ultraviolet detectors

 

作者: E. Mun˜oz,   E. Monroy,   J. A. Garrido,   I. Izpura,   F. J. Sa´nchez,   M. A. Sa´nchez-Garcı´a,   E. Calleja,   B. Beaumont,   P. Gibart,  

 

期刊: Applied Physics Letters  （AIP Available online 1997）
卷期: Volume 71, issue 7  

页码: 870-872

 

ISSN:0003-6951

 

年代: 1997

 

DOI:10.1063/1.119673

 

出版商: AIP

 

数据来源: AIP

 

摘要:

GaN photoconductive detectors have been fabricated on sapphire substrates by metal organic vapor phase epitaxy and gas-source molecular beam epitaxy on Si (111) substrates. The photodetectors showed high photoconductor gains, a very nonlinear response with illuminating power, and an intrinsic nonexponential photoconductance recovery process. A novel photoconductor gain mechanism is proposed to explain such results, based on a modulation of the conductive volume of the layer. ©1997 American Institute of Physics.

 

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