Influence of GaAs capping on the optical properties of InGaAs/GaAs surface quantum dots with 1.5 &mgr;m emission
作者:
Hideaki Saito,
Kenichi Nishi,
Shigeo Sugou,
期刊:
Applied Physics Letters
(AIP Available online 1998)
卷期:
Volume 73,
issue 19
页码: 2742-2744
ISSN:0003-6951
年代: 1998
DOI:10.1063/1.122576
出版商: AIP
数据来源: AIP
摘要:
Uncapped InGaAs quantum dots (surface quantum dots) on a GaAs substrate emit photoluminescence at a long wavelength of 1.53 &mgr;m at room temperature. When the surface dots are covered by a GaAs cap layer, the emission energy of the dots increases by 287 meV. This large energy shift is mainly caused by inducing compressive stress from the cap layer. In segregation on the surface led to greater photoluminescence intensity in the surface quantum dots even at room temperature due to the suppression of nonradiative surface recombination.©1998 American Institute of Physics.
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