Modelling of a new high current gain bipolar transistor withn-doped hydrogenated silicon emitter
作者:
O.Bonnaud,
P.Viktorovitch,
期刊:
IEE Proceedings I (Solid-State and Electron Devices)
(IET Available online 1985)
卷期:
Volume 132,
issue 1
页码: 17-22
年代: 1985
DOI:10.1049/ip-i-1.1985.0005
出版商: IEE
数据来源: IET
摘要:
The limitation of the maximum current gain attainable in a silicon bipolar transistor is due to many factors whose main effect is to prevent the blocking of minority carrier injection in the emitter. In the paper we show that blocking of minority carrier injection in the emitter, and hence a large increase of the current gain, can be achieved with a new type ofnpnbipolar transistor, where the emitter is made ofn-doped hydrogenated amorphous silicon (a-Si: H). It is demonstrated that the very low mobility of carriers and the large bandgap (around 1.8 eV) in amorphous silicon are the two main factors involved in the improvement of the gain. The feasability and the potential interest of the device are studied in detail on the basis of the up-to-date known electrical properties of doped a-Si: H.
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