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The role of point defects generated in the crystalline region in ion beam induced epitaxial crystallization of silicon

 

作者: A.I. Titov,   V.S. Belyakov,   P. Cardwell,   G. Farrell,  

 

期刊: Radiation Effects and Defects in Solids  （Taylor Available online 1996）
卷期: Volume 139, issue 3  

页码: 189-195

 

ISSN:1042-0150

 

年代: 1996

 

DOI:10.1080/10420159608211546

 

出版商: Taylor & Francis Group

 

关键词: ion bombardment;silicon;amorphous layers;ion-induced crystallization

 

数据来源: Taylor

 

摘要:

Ion beam induced epitaxial crystallization of the outer part of a buried amorphous silicon layer is studied following defect generation into the near-surface crystalline region by 2.5 keV Ar+ion bombardment. It is shown that mobile defects generated as far as 10 nm at least from the amorphous-crystalline interface effectively stimulate crystallization.

 

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