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The Effect of Impurities on the Thermoelectric Properties of Bi, Te, and Se at Phase Transitions

 

作者: Ya. I. Dutchak,   I. P. Klyus,   V. Ya. Prokhorenko,  

 

期刊: physica status solidi (b)  (WILEY Available online 1969)
卷期: Volume 31, issue 1  

页码: 25-29

 

ISSN:0370-1972

 

年代: 1969

 

DOI:10.1002/pssb.19690310104

 

出版商: WILEY‐VCH Verlag

 

数据来源: WILEY

 

摘要:

AbstractThe thermo e.m.f. of Zn, Ga, In, Sn, and Bi doped (1 and 1.5 wt%) Bi, Te, and Se is investigated over a large temperature range using solid as well as liquid samples (for Se the amorphous state is also included). The dopants Zn, Ga, In, and Sn strongly affect the thermo e.m.f. of solid but not of liquid Bi. Liquid Te and Se are found to show semiconductor properties determined strongly by impurities, especially for Se. The change in the sign of the thermo e.m.f. of liquid Se is explained by the existence of oxygen atoms acting as acceptors.

 

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