The Effect of Impurities on the Thermoelectric Properties of Bi, Te, and Se at Phase Transitions
作者:
Ya. I. Dutchak,
I. P. Klyus,
V. Ya. Prokhorenko,
期刊:
physica status solidi (b)
(WILEY Available online 1969)
卷期:
Volume 31,
issue 1
页码: 25-29
ISSN:0370-1972
年代: 1969
DOI:10.1002/pssb.19690310104
出版商: WILEY‐VCH Verlag
数据来源: WILEY
摘要:
AbstractThe thermo e.m.f. of Zn, Ga, In, Sn, and Bi doped (1 and 1.5 wt%) Bi, Te, and Se is investigated over a large temperature range using solid as well as liquid samples (for Se the amorphous state is also included). The dopants Zn, Ga, In, and Sn strongly affect the thermo e.m.f. of solid but not of liquid Bi. Liquid Te and Se are found to show semiconductor properties determined strongly by impurities, especially for Se. The change in the sign of the thermo e.m.f. of liquid Se is explained by the existence of oxygen atoms acting as acceptors.
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