The influence of ion implantation conditions on defect formation and amorphisation in silicon
作者:
P.V. Zukovski,
K. Kiszczak,
D. Maczka,
A. Latuszynski,
期刊:
Radiation Effects and Defects in Solids
(Taylor Available online 1994)
卷期:
Volume 132,
issue 1
页码: 11-18
ISSN:1042-0150
年代: 1994
DOI:10.1080/10420159408219251
出版商: Taylor & Francis Group
关键词: Ion implantation;defect formation;amorphization;Ne+;Ar+;Kr+bombardment;temperature dependence
数据来源: Taylor
摘要:
A phenomenological model describing the dependence of deformation processes on ion implantation conditions is proposed. Experimental results of defect formation as well as amorphisation in silicone for the implantation with Ne+, Ar+and Kr+ions in the temperature interval of 150–500 K and for ion current densities of 0.5 to 4.0 μA/cm2are presented. An analysis of the experimental data within the framework of the proposed model has been carried out. The basic characteristics of the defects appearing at silicon amorphisation also have been defined.
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