The upper critical fieldHc2(4.2 K) of superconducting Nb3Ge films prepared by sputtering and chemical vapor deposition (CVD) has been measured in a pulsed field. TheHc2of these films is generally related to their superconducting critical temperatureTc. Sputtered films exhibit a linear increase ofHc2from 25.4 to 33.3 T for aTcrange 18.6–21.3 K. Although the data of CVD‐prepared films are scattered due to nonuniformity in the films, a similar dependence ofHc2onTchas been found.