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Hydrogen‐free SiN films deposited by ion beam sputtering

 

作者: Makoto Kitabatake,   Kiyotaka Wasa,  

 

期刊: Applied Physics Letters  （AIP Available online 1986）
卷期: Volume 49, issue 15  

页码: 927-929

 

ISSN:0003-6951

 

年代: 1986

 

DOI:10.1063/1.97615

 

出版商: AIP

 

数据来源: AIP

 

摘要:

A hydrogen‐free SiN film was deposited by ion beam sputtering at low temperature. The substrate surface was almost parallel to the ion beam. The deposited SiN film exhibited high chemical endurance, high thermal endurance, and low density of memory traps.

 

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