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Very high transconductance InGaAs/InP junction field‐effect transistor with submicrometer gate

 

作者: J. Y. Raulin,   E. Thorngren,   M. A. di Forte‐Poisson,   M. Razeghi,   G. Colomer,  

 

期刊: Applied Physics Letters  （AIP Available online 1987）
卷期: Volume 50, issue 9  

页码: 535-536

 

ISSN:0003-6951

 

年代: 1987

 

DOI:10.1063/1.98151

 

出版商: AIP

 

数据来源: AIP

 

摘要:

A very high transconductance (260 mS/mm) has been achieved for the first time with an InGaAs/InP junction field‐effect transistor. The transistor was fabricated using a chemical etching technique which allowed the fabrication of submicrometer gate (0.5 &mgr;m). Very low values of access resistance were obtained using a self‐aligned technology.

 

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