Time‐resolved photoluminescence studies of InGaN epilayers
作者:
M. Smith,
G. D. Chen,
J. Y. Lin,
H. X. Jiang,
M. Asif Khan,
Q. Chen,
期刊:
Applied Physics Letters
(AIP Available online 1996)
卷期:
Volume 69,
issue 19
页码: 2837-2839
ISSN:0003-6951
年代: 1996
DOI:10.1063/1.117335
出版商: AIP
数据来源: AIP
摘要:
Time‐resolved photoluminescence (PL) has been employed to study the optical transitions and their dynamic processes and to evaluate materials quality of InGaN epilayers grown by metalorganic chemical vapor deposition. Our results suggest that the PL emissions in InGaN epilayers result primarily from localized exciton recombination. The localization energies of these localized excitons have been obtained. In relatively lower quality epilayers, the localized exciton recombination lifetime &tgr;, decreases monotonically with an increase of temperature. In high quality epilayers, &tgr; increases with temperature at low temperatures, which is a well‐known indication of radiative exciton recombination. Our results demonstrate that time‐resolved PL measurements uniquely provide opportunities for the understanding of basic optical processes as well as for identifying high quality materials. ©1996 American Institute of Physics.
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