Self‐assembled quantum dots of InSb grown on InP by atomic layer molecular beam epitaxy: Morphology and strain relaxation
作者:
J. C. Ferrer,
F. Peiro´,
A. Cornet,
J. R. Morante,
T. Uztmeier,
G. Armelles,
F. Briones,
期刊:
Applied Physics Letters
(AIP Available online 1996)
卷期:
Volume 69,
issue 25
页码: 3887-3889
ISSN:0003-6951
年代: 1996
DOI:10.1063/1.117559
出版商: AIP
数据来源: AIP
摘要:
Self‐organized InSb dots grown by atomic layer molecular beam epitaxy on InP substrates have been characterized by atomic force and transmission electron microscopy. Measurement of high‐energy electron diffraction during the growth indicates a Stransky–Krastanov growth mode beyond the onset of 1.4 InSb monolayer (ML) deposition. The dots obtained after a total deposition of 5 and 7 ML of InSb present a truncated pyramidal morphology with rectangular base oriented along the 〈110〉 directions, elongated towards the [110] direction with {111}Blateral facets, with {113}/{114}/{111}Alateral facets in [11¯0] views, and (001) flat top surfaces. The mismatch between the dot and the substrate has been accommodated by a network of 90° misfit dislocation at the interface. A corrugation of the InP substrate surrounding the dot has been also observed. ©1996 American Institute of Physics.
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