Growth by molecular beam epitaxy and characterization of high purity GaAs and AlGaAs
作者:
M. Heiblum,
E. E. Mendez,
L. Osterling,
期刊:
Journal of Applied Physics
(AIP Available online 1983)
卷期:
Volume 54,
issue 12
页码: 6982-6988
ISSN:0021-8979
年代: 1983
DOI:10.1063/1.332015
出版商: AIP
数据来源: AIP
摘要:
We report on the growth by molecular beam epitaxy of high‐quality GaAs and AlxGa1−xAs (x≲0.43), and discuss the effect of system parameters on material quality. The highest Hall mobility in GaAs at 77 °K was 144 000 cm2/V sec, and the photoluminescence spectra of undoped layers exhibited a strong free exciton line and a much reduced carbon peak with no carbon‐related defects. A slow growth process at a substrate temperature of 600 °C produced excellent AlxGa1−xAs whose luminescence spectrum showed a distinct excition peak 4 meV wide. This AlxGa1−xAs is compared to layers grown at a faster rate at substrate temperatures of 700 °C.
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