BaTiO3thin films were grown epitaxially on (100) MgO substrates by metalorganic chemical vapor deposition (MOCVD) at a temperature of 600 °C. This substrate temperature is the lowest reported temperature for the growth of epitaxial BaTiO3films by an MOCVD process. The films had a cube–cube orientation relationship with the substrate and were oriented with ana‐axis perpendicular to the substrate plane. Nanoscale energy dispersive x‐ray spectrometry measurements showed no evidence of interdiffusion between the film and substrate. ©1995 American Institute of Physics.