New test structure to identify step coverage mechanisms in chemical vapor deposition of silicon dioxide
作者:
Lie‐Yea Cheng,
James P. McVittie,
Krishna C. Saraswat,
期刊:
Applied Physics Letters
(AIP Available online 1991)
卷期:
Volume 58,
issue 19
页码: 2147-2149
ISSN:0003-6951
年代: 1991
DOI:10.1063/1.104988
出版商: AIP
数据来源: AIP
摘要:
A new test structure has been developed to identify unambiguously the main mechanism which determines the profiles of thin films deposited by low‐pressure chemical vapor deposition (LPCVD) in structures such as steps, trenches, and via‐holes. The two mechanisms considered are reemission due to a low surface reaction probability and surface diffusion. Experimental results using silane, diethylsilane (DES), tetraethoxysilane (TEOS), and tetramethylcyclotetrasiloxane (TMCTS) as the silicon sources for oxide deposition by LPCVD show that indirect deposition from reemission is the major contributing factor in determining the step coverage.
点击下载:
PDF
(426KB)
返 回