NUCLEATION REACTIONS AND FILM GROWTH OF COPPER ON TiN USING HEXAFLUOROACETYLACETONATE COPPER(I) TRIMETHYLVINYLSILANE
作者:
DO-HEYOUNG KIM,
YOUNGJ. LEE,
CHONG-OOK PARK,
JINWON PARK,
JAEJEONG KIM,
期刊:
Chemical Engineering Communications
(Taylor Available online 1996)
卷期:
Volume 152-153,
issue 1
页码: 307-317
ISSN:0098-6445
年代: 1996
DOI:10.1080/00986449608936570
出版商: Taylor & Francis Group
关键词: Chemical vapor deposition;Copper;Trimethylvinylsilane;Nucleation;TiN
数据来源: Taylor
摘要:
In this work, the nucleation and film growth of copper on TiN chemically treated with WF6and air-exposed TiN by chemical vapor deposition(CVD) from hexafluoroacetylacetonate copper1trimethyl-vinylsilane, (HFA)Cu(TMVS), was studied. Copper grows as islands of poorly connected grains on air-exposed TiN. In contrast, copper grows as a continuous film with well-connected grains on the surface of WF6-treated TiN. The effect of TiN surface condition has been examined using Auger electron spectros-copy(AES), X-ray photoelectron spectroscopy(XPS) and scanning electron microscopy(SEM). On the basis of our experimental observation, and information in the literature, nucleation reaction mechanisms are proposed for the chemical vapor deposition of copper on the two different TiN samples.
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