Two‐dimensional delineation of semiconductor doping by scanning resistance microscopy
作者:
C. Shafai,
D. J. Thomson,
M. Simard‐Normandin,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
(AIP Available online 1994)
卷期:
Volume 12,
issue 1
页码: 378-382
ISSN:1071-1023
年代: 1994
DOI:10.1116/1.587129
出版商: American Vacuum Society
关键词: P−N JUNCTIONS;SURFACE CONDUCTIVITY;ELECTRIC PROBES;DOPING PROFILES;SPATIAL RESOLUTION
数据来源: AIP
摘要:
A new technique for the two‐dimensional delineation ofP–Njunctions is presented using a scanning resistance microscope (SRM). The SRM uses a conducting probe to perform localized resistance measurements over a surface. These resistance measurements are used to delineate between regions of different doping type and concentration. Theoretical simulation shows that the SRM is able to delineate betweenp‐type andn‐type regions of a surface, and between regions of high and low dopant concentration. By using contact forces of 10−4N, the contact area is estimated to be 30 nm. Experiments have shown that this technique can localize aP–Njunction with a lateral spacial resolution of less than 35 nm, over dopant concentrations ranging from 1015to 1020atoms/cm3. In addition, during resistance measurements the SRM is capable of performing simultaneous surface topography measurements.
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