首页   按字顺浏览 期刊浏览 卷期浏览 Broad‐area electron‐beam‐assisted etching of silicon in sulfur hexafluoride
Broad‐area electron‐beam‐assisted etching of silicon in sulfur hexafluoride

 

作者: R. Ortega Martinez,   T. R. Verhey,   P. K. Boyer,   J. J. Rocca,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  （AIP Available online 1988）
卷期: Volume 6, issue 5  

页码: 1581-1583

 

ISSN:0734-211X

 

年代: 1988

 

DOI:10.1116/1.584219

 

出版商: American Vacuum Society

 

关键词: ETCHING;SILICON;ELECTRON BEAMS;BEAM CURRENTS;ANISOTROPY;HELIUM;SULFUR FLUORIDES;EV RANGE 100−1000;PLASMA;Si

 

数据来源: AIP

 

摘要:

Silicon etching rates up to 250 Å/min have been observed in an electron‐beam‐generated He plus SF6plasma. The etch rate was found to increase linearly with electron beam current density and to be practically independent of the electron acceleration voltage in the range investigated (170–260 V). Profiles of the resulting features show that etching is anisotropic with a vertical‐to‐horizontal ratio of 2.5 to 3.

 

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