Focused-ion-beam-assisted etching of diamond inXeF2
作者:
Jun Taniguchi,
Naoto Ohno,
Shuuichi Takeda,
Iwao Miyamoto,
Masanori Komuro,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
(AIP Available online 1998)
卷期:
Volume 16,
issue 4
页码: 2506-2510
ISSN:1071-1023
年代: 1998
DOI:10.1116/1.590199
出版商: American Vacuum Society
关键词: diamond
数据来源: AIP
摘要:
Ga focused-ion-beam (FIB)-assisted etching of single-crystal diamond and thin film diamond inXeF2was studied. The etch yield in FIB-assisted etching of diamond inXeF2is enhanced some six times over the physical sputtering yield. In the crystal orientation dependence of the etch yield in FIB-assisted etching, the (100) face produced the highest etch yield of the three faces—(100), (110), and (111). Thin film diamond produces the lowest etch yield. A diamond field emitter with a tip radius of less than 100 nm was obtained using Ga FIB spot exposure.
点击下载:
PDF
(817KB)
返 回