首页   按字顺浏览 期刊浏览 卷期浏览 Pressure‐Induced Semiconductor‐Metal Transitions in Amorphous Si, Ge andI...
Pressure‐Induced Semiconductor‐Metal Transitions in Amorphous Si, Ge andInSb

 

作者: S. Minomura,   O. Shimomura,   N. Saki,   K. Asaumi,   H. Endo,   K. Tamura,   J. Fukushima,   K. Tsuji,  

 

期刊: AIP Conference Proceedings  （AIP Available online 1974）
卷期: Volume 20, issue 1  

页码: 234-240

 

ISSN:0094-243X

 

年代: 1974

 

DOI:10.1063/1.2945967

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Pressure‐induced semiconductor‐metal transitions have been found in amorphous Si, Ge andInSbat about 100, 60 and 12 kbar, respectively. The high‐pressure metallic modifications of Si remain amorphous, while those of Ge andInSbcrystallize into cubic or tetragonal structure. The metallic character has been demonstrated by the superconductivity and the positive magnetoresistance.

 

点击下载:  PDF (344KB)



返 回