Reduction reaction of native oxide at the initial stage of GeH4chemical vapor deposition on (100) Si
作者:
Yasuo Takahasi,
Hiromu Ishii,
Kiyohisa Fujinaga,
期刊:
Applied Physics Letters
(AIP Available online 1990)
卷期:
Volume 57,
issue 6
页码: 599-601
ISSN:0003-6951
年代: 1990
DOI:10.1063/1.104248
出版商: AIP
数据来源: AIP
摘要:
The existence of offset timet0for the Ge deposition is found at the initial stage of Ge epitaxial growth on the Si(100) surface. Thet0is measured for various GeH4pressures and Si surface conditions. From this investigation, it was determined that thet0corresponded to the period for the reduction reaction of surface native Si oxide. It was concluded that the two surface SixO molecules were reduced by one GeH4molecule.
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