首页   按字顺浏览 期刊浏览 卷期浏览 Modelling the Structure of Amorphous Tetrahedrally Co‐Ordinated SemiconductorsII
Modelling the Structure of Amorphous Tetrahedrally Co‐Ordinated SemiconductorsII

 

作者: G. A. N. Connell,   R. J. Temkint,  

 

期刊: AIP Conference Proceedings  (AIP Available online 1974)
卷期: Volume 20, issue 1  

页码: 192-199

 

ISSN:0094-243X

 

年代: 1974

 

DOI:10.1063/1.2945959

 

出版商: AIP

 

数据来源: AIP

 

摘要:

A continuous random network (CRN), consisting of 238 tetrahedrally co‐ordinated atoms, has been constructed so as to contain only even‐membered rings. Its basic structural properties are reviewed and compared with those of the Polk‐like 201‐atom model of Steinhardt et al. The correlations of bond length and bond angle distortions are investigated and their effect on the structure and its strain energy estimated. Finally, a CRN is proposed that should describe the structure of amorphous Ge more accurately than either of the present models.

 

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