Modelling the Structure of Amorphous Tetrahedrally Co‐Ordinated SemiconductorsII
作者:
G. A. N. Connell,
R. J. Temkint,
期刊:
AIP Conference Proceedings
(AIP Available online 1974)
卷期:
Volume 20,
issue 1
页码: 192-199
ISSN:0094-243X
年代: 1974
DOI:10.1063/1.2945959
出版商: AIP
数据来源: AIP
摘要:
A continuous random network (CRN), consisting of 238 tetrahedrally co‐ordinated atoms, has been constructed so as to contain only even‐membered rings. Its basic structural properties are reviewed and compared with those of the Polk‐like 201‐atom model of Steinhardt et al. The correlations of bond length and bond angle distortions are investigated and their effect on the structure and its strain energy estimated. Finally, a CRN is proposed that should describe the structure of amorphous Ge more accurately than either of the present models.
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