Embossed grating lead chalcogenide distributed‐feedback lasers
作者:
K.‐H. Schlereth,
H. Böttner,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
(AIP Available online 1992)
卷期:
Volume 10,
issue 1
页码: 114-117
ISSN:1071-1023
年代: 1992
DOI:10.1116/1.586309
出版商: American Vacuum Society
关键词: DISTRIBUTED FEEDBACK LASERS;FABRICATION;GRATINGS;DH LASERS;LEAD SELENIDES;EUROPIUM SELENIDES
数据来源: AIP
摘要:
The successful preparation of double‐heterostructure (DH) distributed‐feedback (DFB) PbEuSe lasers using an embossing technique for the DFB sub‐micrometer grating is reported here for the first time. The submicrometer grating was performed in (111) oriented silicon wafers by holographic exposure and argon ion milling. Using a hydrostatic press this grating was embossed into a lead chalcogenide wafer, covered by a DH structure grown by molecular beam epitaxy. Lasers made from wafers with grating periodicities of 0.678 and 0.755 μm show DFB characteristics at the corresponding emission wavenumbers around 1420 and 1590 cm−1.
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