The development of new high dielectric constant materials is essential for the development of advanced silicon integrated circuits. In this letter, we report preliminary results of lanthanum doped lead zirconate titanate (PLZT) films deposited by dual spectral sources (DSS) rapid isothermal processing (RIP) assisted metalorganic chemical vapor deposition (MOCVD) system. The dielectric constant and leakage current density data reported in this letter represents the best results reported to date. The use of high energy photons play an important role in the deposition of high quality dielectric films ©1995 American Institute of Physics.