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Hall effect in silicon on sapphire

 

作者: J. Hynecek,  

 

期刊: Journal of Applied Physics  （AIP Available online 1974）
卷期: Volume 45, issue 6  

页码: 2806-2807

 

ISSN:0021-8979

 

年代: 1974

 

DOI:10.1063/1.1663680

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Variations of Hall mobility with gate bias in gated Hall measurements are explained by considering autodoping of silicon from the sapphire substrate. The method of obtaining the ``true'' electron Hall mobility forn‐doped silicon is presented and the conductivity due to thep‐type impurities is found.

 

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