Ann‐channel metal‐insulator‐semiconductor charge‐coupled device has been successfully demonstrated inp‐type epitaxial Hg0.7Cd0.3Te (&lgr;co≃5.0 &mgr;m, 77 K) grown by liquid‐phase epitaxy on CdTe substrate. A three‐bit, three‐phase device was operated at 77 K, yielding a charge transfer efficiency greater than 0.995 between 5 and 50 kHz clock frequencies. Ion‐implantedn+/pdiodes facilitated signal input and direct output signal detection.