We have investigated the compatibility of TiN gate electrodes with standard metal‐oxide‐semiconductor (MOS) processing. Measurements were performed on MOS capacitors to determine the metal work function, flat‐band voltage, total interface charge density, mobile oxide charge density, oxide leakage current, and breakdown field. The measurement of the threshold voltage as a function of back bias on TiN gate MOS field effect transistors has revealed device characteristics which compare well with those of standard polysilicon gate devices.