The structural dependence of the effective mass and Luttinger parameters in semiconductor quantum wells
作者:
Fei Long,
W. E. Hagston,
P. Harrison,
T. Stirner,
期刊:
Journal of Applied Physics
(AIP Available online 1997)
卷期:
Volume 82,
issue 7
页码: 3414-3421
ISSN:0021-8979
年代: 1997
DOI:10.1063/1.365657
出版商: AIP
数据来源: AIP
摘要:
A detailed comparison of the empirical pseudopotential method with single and multiple band calculations based on the envelope function and effective mass approximations are presented. It is shown that, in order to give agreement with the more rigorous microscopic approach of the pseudopotential method, structural dependent effective masses and Luttinger parameters must be invoked. The CdTe/Cd1−xMnxTe system has been employed as an example, and the first pseudopotential calculations of quantum wells and superlattices in this material are presented. It is shown that the electron, light- and heavy-hole effective masses tend towards twice their bulk values in the limit of narrow quantum wells. ©1997 American Institute of Physics.
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