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Formation of CN−radicals by sequential implantation of carbon and nitrogen ions into KCl

 

作者: W. A. Metz,   E. W. Thomas,  

 

期刊: Journal of Applied Physics  (AIP Available online 1982)
卷期: Volume 53, issue 5  

页码: 3529-3535

 

ISSN:0021-8979

 

年代: 1982

 

DOI:10.1063/1.331176

 

出版商: AIP

 

数据来源: AIP

 

摘要:

It is shown that the sequential implantation of 20–200 keV C+and N+ions into a KCl crystal gives rise to formation of the CN−molecular configuration. Detection of the CN−is by the characteristic luminescence spectrum induced when He+ions are incident on the implanted target, a technique which represents a directinsitudetermination of their presence. It is shown how the ion‐induced optical emission may be used to provide a routine relative measurement of the quantity of CN−present. We describe a phenomenological model of the formation process which leads to the conclusion that each incoming ion searches a volume of the target approximately 3.4×10−21cm3in extent and has a unit probability of combining with an atom of the other species lying in this region. This model explains why saturation of the CN−density occurs at a N+dose independent of the quantity of C+implanted previously.

 

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