Formation of CN−radicals by sequential implantation of carbon and nitrogen ions into KCl
作者:
W. A. Metz,
E. W. Thomas,
期刊:
Journal of Applied Physics
(AIP Available online 1982)
卷期:
Volume 53,
issue 5
页码: 3529-3535
ISSN:0021-8979
年代: 1982
DOI:10.1063/1.331176
出版商: AIP
数据来源: AIP
摘要:
It is shown that the sequential implantation of 20–200 keV C+and N+ions into a KCl crystal gives rise to formation of the CN−molecular configuration. Detection of the CN−is by the characteristic luminescence spectrum induced when He+ions are incident on the implanted target, a technique which represents a directinsitudetermination of their presence. It is shown how the ion‐induced optical emission may be used to provide a routine relative measurement of the quantity of CN−present. We describe a phenomenological model of the formation process which leads to the conclusion that each incoming ion searches a volume of the target approximately 3.4×10−21cm3in extent and has a unit probability of combining with an atom of the other species lying in this region. This model explains why saturation of the CN−density occurs at a N+dose independent of the quantity of C+implanted previously.
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