Methods in semiconductor surface chemistry
作者:
M. J. Bozack,
L. Muehlhoff,
J. N. Russell,
W. J. Choyke,
J. T. Yates,
期刊:
Journal of Vacuum Science&Technology A: Vacuum, Surfaces, and Films
(AIP Available online 1987)
卷期:
Volume 5,
issue 1
页码: 1-8
ISSN:0734-2101
年代: 1987
DOI:10.1116/1.574131
出版商: American Vacuum Society
关键词: SILICON;ADSORPTION;PROPYLENE;SORPTIVE PROPERTIES;CHEMICAL VAPOR DEPOSITION;SURFACE REACTIONS;CHEMICAL REACTION KINETICS;SEMICONDUCTOR MATERIALS;ETCHING;Si
数据来源: AIP
摘要:
Methods for studying semiconductor surface chemistry are presented. It is shown that adsorption and desorption kinetic measurements, when combined with Auger spectroscopy, can give useful insights into fundamental elementary surface kinetic processes which are important in understanding the behavior of complex chemical vapor deposition, plasma vapor deposition, or reactive ion etching processes. Techniques for crystal preparation, mounting, temperature control, and reaction kinetic measurements are given using examples from the adsorption and reaction of propylene with Si(100). An illustration of the manipulation of active site availability on Si(100) is described.
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