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Raman study of evaporated and sputtered GexSe1−xglass films

 

作者: James E. Griffiths,   W. Robert Sinclair,  

 

期刊: Applied Physics Letters  (AIP Available online 1981)
卷期: Volume 39, issue 7  

页码: 551-553

 

ISSN:0003-6951

 

年代: 1981

 

DOI:10.1063/1.92790

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Raman spectra of thin film GexSe1−x(x= 0.1, 0.33) glasses shows them to be structurally and compositionally similar on a molecular scale whether prepared by evaporation or sputtering techniques. Their sensitivity as silver‐doped photoresist materials correlates directly with information obtained from backscattering Raman experiments on the initially prepared films. Low sensitivity in some films prepared by sputtering onto low‐temperature substrates is attributed to film contamination, probably by oxygen containing impurities or by other materials that inhibit formation of optically absorbing Ge–Se bonding networks.

 

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