Raman study of evaporated and sputtered GexSe1−xglass films
作者:
James E. Griffiths,
W. Robert Sinclair,
期刊:
Applied Physics Letters
(AIP Available online 1981)
卷期:
Volume 39,
issue 7
页码: 551-553
ISSN:0003-6951
年代: 1981
DOI:10.1063/1.92790
出版商: AIP
数据来源: AIP
摘要:
Raman spectra of thin film GexSe1−x(x= 0.1, 0.33) glasses shows them to be structurally and compositionally similar on a molecular scale whether prepared by evaporation or sputtering techniques. Their sensitivity as silver‐doped photoresist materials correlates directly with information obtained from backscattering Raman experiments on the initially prepared films. Low sensitivity in some films prepared by sputtering onto low‐temperature substrates is attributed to film contamination, probably by oxygen containing impurities or by other materials that inhibit formation of optically absorbing Ge–Se bonding networks.
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