Epitaxial growth of Fe(211) was achieved at a room temperature on MgO(110) with a dc facing targets sputtering system. The epitaxial relation was confirmed by electron diffraction: ⟨111⟩ in the Fe(211) plane is parallel to ⟨110⟩ in the MgO(110) plane with a 6:5 coincident site lattice. Crystallographic and magnetic properties could be controlled by changing the rf power of substrate bias and substrate temperature. The magnetocrystalline anisotropy energy for Fe(211) was calculated and compared with experimental results. The film deposited at 400 °C with 10 W of rf bias had a small stress and showed almost theoretical behavior in a torque measurement. The difference in the in‐plane anisotropy energy between the film and bulk was attributed to the effect of uniaxial anisotropy energy.