Delayed and continuous nucleation of islands in GaAs molecular beam epitaxy revealed byinsituscanning electron microscopy
作者:
J. Osaka,
N. Inoue,
Y. Homma,
期刊:
Applied Physics Letters
(AIP Available online 1995)
卷期:
Volume 66,
issue 16
页码: 2110-2112
ISSN:0003-6951
年代: 1995
DOI:10.1063/1.113919
出版商: AIP
数据来源: AIP
摘要:
Insituscanning electron microscopy reveals delayed and continuous nucleation of two‐dimensional islands in the molecular beam epitaxy of GaAs. It is found that the islands do not appear until about 1/3 of a monolayer is deposited. The mechanism is discussed in terms of site dependent successive atomic layer growth processes. Nucleation continues till the islands start to coalesce. ©1995 American Institute of Physics.
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