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Valence Bands in Lead Telluride

 

作者: R. S. Allgaier,  

 

期刊: Journal of Applied Physics  (AIP Available online 1961)
卷期: Volume 32, issue 10  

页码: 2185-2189

 

ISSN:0021-8979

 

年代: 1961

 

DOI:10.1063/1.1777039

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The magnetic field dependence of the Hall coefficient at 296° and 77°K, and the temperature dependence of the weak‐field Hall coefficient and the resistivity between 296° and 77°K were studied in single‐crystal samples ofp‐type PbTe having carrier concentrations ranging from 4.9×1017to 1.7×1019per cm3. The Hall data at 77°K are quantitatively consistent with magnetoresistance data which have previously established the presence of ⟨111⟩ ellipsoids in the valence band. They are not consistent with a low‐temperature two‐band model, proposed by Stiles from de Haas‐van Alphen data at 4.2°K, unless the band edges lie at approximately the same energy (as Stiles found) and unless the carrier mobilities in the two bands are nearly alike. On the other hand, both the Hall and resistivity data above about 150°K do exhibit two‐carrier effects suggesting the presence of a lower mobility band at an energy about 0.1 ev below those bands which are occupied at low temperatures.

 

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