Correlation of stress with light‐induced defects in hydrogenated amorphous silicon films
作者:
Sarah R. Kurtz,
Y. Simon Tsuo,
Raphael Tsu,
期刊:
Applied Physics Letters
(AIP Available online 1986)
卷期:
Volume 49,
issue 15
页码: 951-953
ISSN:0003-6951
年代: 1986
DOI:10.1063/1.97493
出版商: AIP
数据来源: AIP
摘要:
No correlation was found between the stress in hydrogenated amorphous silicon films and the light‐induced effect, as measured by the photoconductivity. An equation is derived for calculation of the external stress applied to a film. The light‐induced degradation in a ‘‘zero‐stress’’ film (one removed from the substrate) was shown to be equivalent to that of an as‐deposited film.
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