Current‐controlled negative differential resistance in InAs/AlxGa1−xSb tunnel structures
作者:
D. H. Chow,
J. N. Schulman,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
(AIP Available online 1994)
卷期:
Volume 12,
issue 2
页码: 1283-1285
ISSN:1071-1023
年代: 1994
DOI:10.1116/1.587023
出版商: American Vacuum Society
关键词: HETEROSTRUCTURES;TUNNEL EFFECT;TERNARY COMPOUNDS;INDIUM ARSENIDES;ALUMINIUM ANTIMONIDES;GALLIUM ANTIMONIDES;MOLECULAR BEAM EPITAXY;IV CHARACTERISTIC;CURRENT DENSITY;HYSTERESIS;BISTABILITY;InAs;(Al,Ga)Sb;GaAs
数据来源: AIP
摘要:
We report the design and demonstration of a novel resonant tunneling device which displays bistability in operating current over a range of applied voltages. The device is based on an InAs/AlxGa1−xSb double barrier heterostructure. Although similar in design to conventional resonant tunneling structures, the type‐II InAs/AlxGa1−xSb heterostructure permits the simultaneous accumulation of electrons and holes in the quantum well/barrier region under an applied bias. The steady‐state free‐charge distribution, and hence the device current, is strongly dependent upon the bias history of the device. This effect is manifested as a current‐controlled (S‐shaped) negative differential resistance under conditions in which the device current is specified while the device voltage is measured; a bistable (hysteretic) characteristic is observed under conditions in which the voltage is specified and the current is measured. We have observed current bistability for AlxGa1−xSb barrier compositions in the range 0.4
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