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The temperature dependence of the refractive index of silicon at elevated temperatures at several laser wavelengths

 

作者: G. E. Jellison,   H. H. Burke,  

 

期刊: Journal of Applied Physics  (AIP Available online 1986)
卷期: Volume 60, issue 2  

页码: 841-843

 

ISSN:0021-8979

 

年代: 1986

 

DOI:10.1063/1.337386

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The refractive index of silicon has been measured at elevated temperatures at several different laser wavelengths of the HeNe and the Ar+cw lasers. This data, along with the reinterpretation of polarization modulation ellipsometry data, shows that the refractive index is linear with temperature (from 25 to ∼750 °C) and that the temperature coefficient of the refractive index increases as the wavelength of light decreases.

 

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