The temperature dependence of the refractive index of silicon at elevated temperatures at several laser wavelengths
作者:
G. E. Jellison,
H. H. Burke,
期刊:
Journal of Applied Physics
(AIP Available online 1986)
卷期:
Volume 60,
issue 2
页码: 841-843
ISSN:0021-8979
年代: 1986
DOI:10.1063/1.337386
出版商: AIP
数据来源: AIP
摘要:
The refractive index of silicon has been measured at elevated temperatures at several different laser wavelengths of the HeNe and the Ar+cw lasers. This data, along with the reinterpretation of polarization modulation ellipsometry data, shows that the refractive index is linear with temperature (from 25 to ∼750 °C) and that the temperature coefficient of the refractive index increases as the wavelength of light decreases.
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