Strain relaxation of InGaAs/GaAs superlattices by wet oxidation of underlying AlAs layer
作者:
Jin Ho Seo,
Kwang Seok Seo,
期刊:
Applied Physics Letters
(AIP Available online 1998)
卷期:
Volume 72,
issue 12
页码: 1466-1468
ISSN:0003-6951
年代: 1998
DOI:10.1063/1.120594
出版商: AIP
数据来源: AIP
摘要:
The effects of AlAs wet oxidation on overlayers were investigated using InGaAs/GaAs strained-layer superlattice structures grown on an AlAs layer. The superlattice partially relaxes towards its equilibrium spacing as the result of the oxidation of the underlying AlAs layer. Double-crystal x-ray diffraction measurements were used to determine the degree of strain relaxation. Larger relaxation is observed for the sample with a higher indium composition and a thicker AlAs layer. ©1998 American Institute of Physics.
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