Transmission electron microscopy analysis of a multiple quantum wire structure fabricated by dislocation slip
作者:
L. Ressier,
J. P. Peyrade,
C. Vieu,
期刊:
Journal of Applied Physics
(AIP Available online 1997)
卷期:
Volume 81,
issue 6
页码: 2596-2600
ISSN:0021-8979
年代: 1997
DOI:10.1063/1.364304
出版商: AIP
数据来源: AIP
摘要:
Dislocations are used as “atomic saws’’ to cut a 5 nm GaAs quantum well into a multiple quantum wire structure. The direct observation of these cuts in the volume, was performed by transmission electron microscopy, using cross section specimens, thinned perpendicular to the quantum wire axis by a highly localized preparation technique. This special thinning procedure, involving electron-beam lithography and reactive ion etching, allowed us to realize a statistical analysis of the distances between neighboring cuts and the heights of cuts. This dimensional analysis revealed the formation of coupled quantum wires with a width of 18±9 nm and free from any lateral roughness on 100 nm lengths. ©1997 American Institute of Physics.
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