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Growth ofinsitudoped silicon epitaxial layer by rapid thermal processing

 

作者: S. K. Lee,   Y. H. Ku,   T. Y. Hsieh,   K. H. Jung,   D. L. Kwong,   David Spratt,   P. Chu,  

 

期刊: Applied Physics Letters  （AIP Available online 1990）
卷期: Volume 57, issue 16  

页码: 1628-1630

 

ISSN:0003-6951

 

年代: 1990

 

DOI:10.1063/1.104069

 

出版商: AIP

 

数据来源: AIP

 

摘要:

In this letter, rapid thermal processing chemical vapor deposition has been used to grow high qualityinsitudoped silicon epitaxial layers. Device quality epilayers have been obtained for both boron and phosphorus doping with abrupt dopant transition profiles. The mobility values of these doped epilayers are very close to the values for bulk silicon under the same doping concentration.

 

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