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On the establishment of an inversion layer inp‐ andn‐type silicon substrates under conditions of high oxide fields

 

作者: P. M. Solomon,  

 

期刊: Applied Physics Letters  （AIP Available online 1977）
卷期: Volume 30, issue 11  

页码: 597-598

 

ISSN:0003-6951

 

年代: 1977

 

DOI:10.1063/1.89250

 

出版商: AIP

 

数据来源: AIP

 

摘要:

It has been observed that an inversion layer cannot form in ap‐type silicon substrate when the Fowler‐Nordheim tunneling current into the oxide exceeds the minority generation current in the depletion layer. On the other hand, forn‐type substrates, the formation of the inversion layer is unaffected by the oxide current.

 

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