Evidence for excitonic decay of excess charge carriers in high quality GaAs quantum wells at room temperature
作者:
D. Bimberg,
J. Christen,
A. Werner,
M. Kunst,
G. Weimann,
W. Schlapp,
期刊:
Applied Physics Letters
(AIP Available online 1986)
卷期:
Volume 49,
issue 2
页码: 76-78
ISSN:0003-6951
年代: 1986
DOI:10.1063/1.97357
出版商: AIP
数据来源: AIP
摘要:
A comparative study is presented of the room‐temperature decay of laser excited microwave photoconductivity and of cathodoluminescence of high quality GaAs multiple quantum wells grown by molecular beam expitaxy and of high quality GaAs liquid phase epitaxial layers. The results from both experiments are inquantitativeagreement and prove that carrier recombination in multiple quantum wells occurs via excitonic decay channels at excess carrier densities less than 1017cm−3. In contrast, band‐band recombination prevails in three‐dimensional material.
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