An extensive investigation of eight mixed garnet systems, totally 22 compositions with the samelvalues (0.2&mgr;m), was carried out for realization of high bit density bubble memory chips employing 1.8&mgr;m diameter bubbles in 7&mgr;m‐period devices. The eight systems are YSmLuCaGe, YSmTmCaGe, YEuLuCaGe, YEuTmCaGe, YSmLuGa, YSmTmGa, YEuLuGa and YEuTmGa garnets grown on (111) GGG substrates. In order to fill in the material gap between Sm‐ and Eu‐based garnets, YSmEuLuCaGe and YSmEuTmCaGe garnets were also studied. Comparison was made with respect to static (4&pgr;Ms, Ku, HK, TC, A) and dynamic (&mgr;w, &Vthgr;) properties, as well as Hco1temperature dependence. Q‐factor was varied by changing rare earth content ratio, butland film lattice parameters were left essentially unchanged. From the dynamic and temperature properties viewpoints, it was revealed that YSmLuCaGe, YSmTmCaGe, EuLuCaGe, YSmEuLuCaGe, and YEuTmGa garnet systems are candidate materials, withl=0.2&mgr;m and Q?4, for practical applications which utilize 7&mgr;m‐period patterns.