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pnplateral magnetotransistor and influence ofn+‐buried layer on sensitivity

 

作者: Ljubisa Ristic,   Kazusuke Maenaka,   Tom Smy,   Tetsuro Nakamura,   My The Doan,  

 

期刊: Applied Physics Letters  （AIP Available online 1991）
卷期: Volume 58, issue 2  

页码: 149-151

 

ISSN:0003-6951

 

年代: 1991

 

DOI:10.1063/1.104956

 

出版商: AIP

 

数据来源: AIP

 

摘要:

An analysis of the sensitivity of apnplateral magnetotransistor (LMT) fabricated in bipolar technology is presented. In addition, the role of then+‐buried layer is studied. The devices were designed as differential LMTs. It has been found that the change in sensitivity ofpnpLMT increases by one order of magnitude if then+‐buried layer is not omitted. The obtained sensitivity is the highest ever reported for apnpLMT.

 

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