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Ar Sputtered Si by XPS

 

作者: Kazuhiro Nakajima,   Sean P. McGinnis,   Michael A. Kelly,  

 

期刊: Surface Science Spectra  （AIP Available online 1993）
卷期: Volume 2, issue 3  

页码: 171-176

 

ISSN:1055-5269

 

年代: 1993

 

DOI:10.1116/1.1247739

 

出版商: American Vacuum Society

 

关键词: SILICON;PHOTOELECTRON SPECTROSCOPY;X RADIATION;SPUTTERING;PHOTOEMISSION;VALENCE BANDS;PLASMONS;MONOCRYSTALS;P−TYPE CONDUCTORS;DOPED MATERIALS;BORON ADDITIONS

 

数据来源: AIP

 

摘要:

X-ray photoemission spectra from Si which has been physically etched by Ar ion sputtering are presented. The data include measurements of the valence band region, Si 2pregion, Si 2sregion, C 1sregion, and plasmon structure. These data are useful for comparison to pristine and oxidized silicon.

 

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