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Closed‐ampoule diffusion of sulfur into Cd‐doped InP substrates: Dependence of S profiles on diffusion temperature and time

 

作者: Mircea Faur,   Maria Faur,   Frank Honecy,   Chandra Goradia,   Manju Goradia,   Douglas Jayne,   Ralph Clark,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena  （AIP Available online 1992）
卷期: Volume 10, issue 4  

页码: 1277-1284

 

ISSN:1071-1023

 

年代: 1992

 

DOI:10.1116/1.585900

 

出版商: American Vacuum Society

 

关键词: DIFFUSION;SULFUR;INDIUM PHOSPHIDES;ATOM TRANSPORT;CADMIUM ADDITIONS;P−N JUNCTIONS;TIME DEPENDENCE;TEMPERATURE DEPENDENCE;INDIUM PHOSPHIDE SOLAR CELLS;InP:Cd

 

数据来源: AIP

 

摘要:

In order to optimize the fabrication ofn+–pInP solar cells made by closed‐ampoule diffusion of sulfur intop‐InP:Cd substrates, we have investigated the influence of diffusion conditions on sulfur diffusion profiles. We show that S diffusion in InP is dominated by the P vacancy mechanism and is not characterized by a complementary error function as expected for an infinite source diffusion. The S diffusion mechanism inp‐InP is qualitatively explained by examining the depth profiles of S, P, and In in the emitter layer and by taking into account the presence and composition of different compounds found to form in the In–P–S–O–Cd system as a result of diffusion.

 

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