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Broadband tunable picosecond semiconductor lasers

 

作者: T. C. Damen,   M. A. Duguay,   J. Shah,   J. Stone,   J. M. Wiesenfeld,   R. A. Logan,  

 

期刊: Applied Physics Letters  （AIP Available online 1981）
卷期: Volume 39, issue 2  

页码: 142-145

 

ISSN:0003-6951

 

年代: 1981

 

DOI:10.1063/1.92661

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Intense photoexcitation of GaAs by picosecond laser pulses creates a superdense electron‐hole plasma (∼1020cm−3) which sustains laser action from 8900 A˚ in the IR to 7700 A˚ in the visible. Tunable picosecond laser pulses are obtained by moving a slightly wedged ultrashort cavity in the focus of the pump laser pulse.

 

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