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GaAs(110) by XPS

 

作者: D. M. Poirier,   J. H. Weaver,  

 

期刊: Surface Science Spectra  （AIP Available online 1993）
卷期: Volume 2, issue 3  

页码: 201-208

 

ISSN:1055-5269

 

年代: 1993

 

DOI:10.1116/1.1247700

 

出版商: American Vacuum Society

 

关键词: GALLIUM ARSENIDES;PHOTOELECTRON SPECTROSCOPY;X RADIATION;CLEAVAGE;MONOCRYSTALS;VALENCE BANDS;DOPED MATERIALS;SILICON ADDITIONS

 

数据来源: AIP

 

摘要:

X-ray photoelectron spectra of GaAs(110) were recorded for a single crystal cleavedinsitu(Accession #00101). For comparison, spectra are included for a (110) surface cleavedexsituand exposed to air for 1 h (Accession #00102). The electronic record includes, for each surface preparation, the valence band region, the Ga and As 3dregions, the Ga and AsLMMregions, and the Ga 2pregion.

 

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