The effect of growth interruption on the properties of InGaAs/InAlAs quantum well structures
作者:
W. C. H. Choy,
P. J. Hughes,
B. L. Weiss,
E. H. Li,
K. Hong,
D. Pavlidis,
期刊:
Applied Physics Letters
(AIP Available online 1998)
卷期:
Volume 72,
issue 3
页码: 338-340
ISSN:0003-6951
年代: 1998
DOI:10.1063/1.120729
出版商: AIP
数据来源: AIP
摘要:
The effect of the growth interruption time during the growth of InGaAs/InAlAs quantum well structures is shown to have a significant effect on both the interband transitions, as determined by photoreflectance, and the electrical properties of the as-grown structure. The results show that, for increasing growth interruption time, the quantum well heterointerfaces become more abrupt and the carrier mobility increases, thereby demonstrating that long interruption times are preferable for the growth of high quality rectangular quantum well structures. ©1998 American Institute of Physics.
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